| Issue |
J. Phys. Colloques
Volume 42, Number C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-261 - C4-264 | |
| DOI | https://doi.org/10.1051/jphyscol:1981455 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-261-C4-264
DOI: 10.1051/jphyscol:1981455
Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, 7000 Stuttgart 80, F.R.G.
J. Phys. Colloques 42 (1981) C4-261-C4-264
DOI: 10.1051/jphyscol:1981455
PHOTOEMISSION STUDIES OF THE TRANSITION FROM AMORPHOUS TO MICROCRYSTALLINE SILICON
H. Richter and L. LeyMax-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, 7000 Stuttgart 80, F.R.G.
Abstract
We have studied a series of samples spanning the range from purely amorphous to microcrystalline silicon prepared by chemical transport in a hydrogen plasma or by sputtering in a H2/Ar mixture. The first order Raman spectra show a superposition of amorphous and crystalline contribution, showing some features of wurtzite-silicon. The electronic density of states, as deduced from X-ray photoelectron-spectroscopy, shows a gradual change from microcrystalline structure for samples prepared by chemical transport to the amorphous DOS for samples sputtered in pure argon.