| Issue |
J. Phys. Colloques
Volume 42, Number C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-171 - C4-174 | |
| DOI | https://doi.org/10.1051/jphyscol:1981435 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-171-C4-174
DOI: 10.1051/jphyscol:1981435
Institut für Angewandte Physik, Universität Heidelberg, Heidelberg, F.R.G.
J. Phys. Colloques 42 (1981) C4-171-C4-174
DOI: 10.1051/jphyscol:1981435
AC TRANSPORT AND STRUCTURAL RELAXATIONS IN DISORDERED SOLIDS
W.W. Schmidt and K.G. BreitschwerdtInstitut für Angewandte Physik, Universität Heidelberg, Heidelberg, F.R.G.
Abstract
Measurements of the dielectric properties and the a.c. conductivity of glassy As2Se3 are reported. A model whereby an initial dielectric response is coupled to structural relaxations describes the available data between 1 kHz and 1 THz.