| Issue |
J. Phys. Colloques
Volume 42, Number C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-1029 - C4-1032 | |
| DOI | https://doi.org/10.1051/jphyscol:19814225 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-1029-C4-1032
DOI: 10.1051/jphyscol:19814225
Plessey Research (Caswell), Limited Allen Clark Research Centre, Caswell, Towcester, Northamptonshire, England
J. Phys. Colloques 42 (1981) C4-1029-C4-1032
DOI: 10.1051/jphyscol:19814225
LUMINESCENCE IN PLASMA DEPOSITED AMORPHOUS SixC1-x ALLOYS
R.S. Sussmann and E.H. LauderPlessey Research (Caswell), Limited Allen Clark Research Centre, Caswell, Towcester, Northamptonshire, England
Abstract
Results are presented on the composition and temperature dependence of the luminescence in plasma deposited amorphous SixC1-x alloys using films of composition ranging from pure Si to 90% C in the 77 K to 450 K temperature range. There is evidence to suggest that the radiative recombination rate increases by over a factor of 103 from pure Si to C rich films. This increase is shown to be also consistent with the composition dependence of the quantum efficiency. These results are discussed in terms of a radiative tunnelling model.