| Issue |
J. Phys. Colloques
Volume 42, Number C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-1009 - C4-1012 | |
| DOI | https://doi.org/10.1051/jphyscol:19814220 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-1009-C4-1012
DOI: 10.1051/jphyscol:19814220
1 Physics Institute, UNICAMP, C.P. 1170, Campinas, S.P., 13.100 Brazil
2 CNRS, France
J. Phys. Colloques 42 (1981) C4-1009-C4-1012
DOI: 10.1051/jphyscol:19814220
ELECTRICAL AND OPTICAL PROPERTIES OF AMORPHOUS TIN OXIDE
I. Chambouleyron1, C. Constantino2, D. Jousse2, R. Assumpção1 and R. Brenzikofer.11 Physics Institute, UNICAMP, C.P. 1170, Campinas, S.P., 13.100 Brazil
2 CNRS, France
Abstract
Thin layers of tin oxide have been deposited by the chemical spray method. From X-ray diffraction, Hall effect and optical measurements we conclude that films deposited at temperatures lower than 300°C are amorphous. Transport and optical data are given for both polycrystalline and amorphous materials.