| Issue |
J. Phys. Colloques
Volume 42, Number C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-997 - C4-1000 | |
| DOI | https://doi.org/10.1051/jphyscol:19814217 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-997-C4-1000
DOI: 10.1051/jphyscol:19814217
Research Group on Luminescence and Semiconductors, Hungarian Academy of Sciences, Szeged, Hungary
J. Phys. Colloques 42 (1981) C4-997-C4-1000
DOI: 10.1051/jphyscol:19814217
AMORPHOUS VANADIUM OXIDES BY CVD : PREPARATION, ELECTRICAL AND MAGNETIC PROPERTIES
T. Szörényi, K. Bali and I. HevesiResearch Group on Luminescence and Semiconductors, Hungarian Academy of Sciences, Szeged, Hungary
Abstract
Chemical vapour deposition of VOCl3 with H2O in controlled atmosphere is a unique method in producing amorphous vanadium oxides that contain only V5+ and V4+ ions with continuously varying valence ratio /c/ between <0.02 and ≈ 1.0. The room temperature d.c. conductivity of as prepared V2O5 films ranges between 10-5 and 10-3 ohm-1m-1 and is strongly dependent on preparation conditions. Increasing the valence ratio the conductivity first increases to ≈ 10-2 ohm-lm-1, then declines to 10-4 ohm-lm-1. EPR spectra indicate that the environment of V4+ ions is not identical in films of different compositions.