Issue
J. Phys. Colloques
Volume 42, Number C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
Page(s) C4-943 - C4-946
DOI https://doi.org/10.1051/jphyscol:19814206
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors

J. Phys. Colloques 42 (1981) C4-943-C4-946

DOI: 10.1051/jphyscol:19814206

AMORPHOUS SEMICONDUCTING Ag-Te FILMS

J.J. Hauser

Bell Laboratories, Murray Hill, New Jersey 07974, U.S.A.


Abstract
Amorphous Ag-Te films were obtained by diffusing Ag atoms at 203K from an already deposited crystalline Ag film into the oncoming Te atom vapor or by diffusing Ag atoms into an amorphous Te film. When the Ag film is deposited first, monitoring in-situ the resistance of the Ag film while depositing Te establishes unambiguously that it is Ag that diffuses into Te. The Ag diffusion rate at 300K is 4x105 Å2 sec-1 with an activation energy of 0.3 eV. The temperature of 203K is high enough to allow sufficiently rapid diffusion and low enough to result in an amorphous film. All amorphous Ag-Te films display variable range hopping (resistivity proportional to exp(T0/T)¼).