| Issue |
J. Phys. Colloques
Volume 42, Number C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-927 - C4-930 | |
| DOI | https://doi.org/10.1051/jphyscol:19814202 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-927-C4-930
DOI: 10.1051/jphyscol:19814202
Research Institute of Electronics, Shizuoka University, Johoku 3-5-1, Hamamatsu 432, Japan
J. Phys. Colloques 42 (1981) C4-927-C4-930
DOI: 10.1051/jphyscol:19814202
AC CONDUCTIVITY OF AMORPHOUS As-Se-Ag SYSTEM
M. Kitao, K. Hirata and S. YamadaResearch Institute of Electronics, Shizuoka University, Johoku 3-5-1, Hamamatsu 432, Japan
Abstract
A.C. conductivity σac of amorphous As40+xSe60-x and As2Se3 : Ag has been measured. The σac of these materials varies as ωs in the audio frequency range. At room temperature, the exponent s decreases from 1 to 0.7 with increasing x in As40+xSe60-x while s is 0.7 irrespective of Ag content in As2Se3 : Ag. With decreasing temperature, s in As2Se3 : Ag increases. Defect states due to Ag additives are considered to be directly concerned with σac.