Issue |
J. Phys. Colloques
Volume 42, Number C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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Page(s) | C4-919 - C4-922 | |
DOI | https://doi.org/10.1051/jphyscol:19814200 |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-919-C4-922
DOI: 10.1051/jphyscol:19814200
Ioffe Physical-Technical Institute, Academy of Science of the USSR, Leningrad, USSR
J. Phys. Colloques 42 (1981) C4-919-C4-922
DOI: 10.1051/jphyscol:19814200
POLARIZED LIGHT ELECTROABSORPTION ANISOTROPY OF VITREOUS CHALCOGENIDE SEMICONDUCTORS
B.L. Gelmont, B.T. Kolomiets, T.F. Mazets and S.K. PavlovIoffe Physical-Technical Institute, Academy of Science of the USSR, Leningrad, USSR
Abstract
An anisotropy of electroabsorption (EA) in plane polarized light has been revealed and studied in the As2Se3, As2S3, AsSe, Ge2S3 glasses as well as in amorphous films of Se and Si : H. A model relating the magnitude of EA anisotropy to local bond symmetry is proposed.