Issue
J. Phys. Colloques
Volume 42, Number C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
Page(s) C4-111 - C4-114
DOI https://doi.org/10.1051/jphyscol:1981420
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors

J. Phys. Colloques 42 (1981) C4-111-C4-114

DOI: 10.1051/jphyscol:1981420

MONTE CARLO SIMULATION OF VARIABLE RANGE HOPPING AT THE FERMI LEVEL

G. Schönherr1, H. Bässler1 and M. Silver2

1  Fachbereich Physikalische Chemie, Philipp-Universität, Hans-Meerwein-Straße, D-3550 Marburg, F.R.G.
2  Department of Physics and Astronomy, University of North Carolina, Chapel Hill , N.C. 27514, U.S.A.


Abstract
Employing the Monte Carlo technique hopping at the Fermi level in a cubic lattice has been simulated as a function of temperature, electric field, hopping parameter 2α, and time. It has been found that the predictions of the simple theories agree remarkably well with our computer experiments. In our work we find a true d.c. conductivity proportional to exp -(T0/T)1/4 at low temperatures. The time dependence shows dispersion at short times due to energy relaxation and later equilibrium to the average hopping distance.