| Issue |
J. Phys. Colloques
Volume 42, Number C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-839 - C4-841 | |
| DOI | https://doi.org/10.1051/jphyscol:19814185 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-839-C4-841
DOI: 10.1051/jphyscol:19814185
1 Section de Résonance Magnétique and LETI-NCE, CENG, 85 X, 38041 Grenoble Cedex, France
2 Section de Résonance Magnétique and LETI-NCE, CENG, 85 X, 38041 Grenoble Ceder, France
J. Phys. Colloques 42 (1981) C4-839-C4-841
DOI: 10.1051/jphyscol:19814185
HIGH RESOLUTION NMR OF 29Si IN AMORPHOUS HYDROGENATED SILICON
B. Lamotte1, A. Rousseau1 and A. Chenevas-Paule21 Section de Résonance Magnétique and LETI-NCE, CENG, 85 X, 38041 Grenoble Cedex, France
2 Section de Résonance Magnétique and LETI-NCE, CENG, 85 X, 38041 Grenoble Ceder, France
Abstract
The new techniques of High Resolution NMR in solids by cross-polarization with protons and magic angles rotation of the sample have been applied to the study of amorphous hydrogenated Silicon in order to contribute to the characterization of this material. This method gives the possibility to distinguish (by their "chemical shifts") the different kinds of environments of each 29Si nucleus, in relation with the bonds in which these atoms are involved.