| Issue |
J. Phys. Colloques
Volume 42, Number C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
|
|
|---|---|---|
| Page(s) | C4-779 - C4-782 | |
| DOI | https://doi.org/10.1051/jphyscol:19814170 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-779-C4-782
DOI: 10.1051/jphyscol:19814170
1 Max-Planck-Institut für Kernphysik, D-6900 Heidelberg, F.R.G.
2 University of Dundee, Dundee DD1 4HN, Scotland
J. Phys. Colloques 42 (1981) C4-779-C4-782
DOI: 10.1051/jphyscol:19814170
HYDROGEN PROFILING IN GAS PHASE DOPED AND ION IMPLANTED AMORPHOUS SILICON FILMS
F.J. Demond1, G. Müller1, H. Damjantschitsch1, H. Mannsperger1, S. Kalbitzer1, P.G. Le Comber2 and W.E. Spear21 Max-Planck-Institut für Kernphysik, D-6900 Heidelberg, F.R.G.
2 University of Dundee, Dundee DD1 4HN, Scotland
Abstract
The hydrogen concentration cH and its spatial distribution in a series of glow discharge a-Si specimens, doped in the gas phase or by ion implantation, have been investigated by the 15N nuclear reaction. The results show : (i) cH in the bulk of gas phase doped material depends on the gaseous doping ratios ; (ii) cH in the surface generally deviates from cH in the bulk within a depth of about 500 Å ; (iii) in specimens doped by ion implantation εf can be moved throughout the mobility gap without producing changes in cH.