| Issue |
J. Phys. Colloques
Volume 42, Number C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-741 - C4-744 | |
| DOI | https://doi.org/10.1051/jphyscol:19814162 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-741-C4-744
DOI: 10.1051/jphyscol:19814162
Department of Physics, North Carolina State University, Raleigh, NC 27650, U.S.A.
J. Phys. Colloques 42 (1981) C4-741-C4-744
DOI: 10.1051/jphyscol:19814162
CHEMICAL BONDING OF ALLOY AND DOPANT ATOMS IN AMORPHOUS SILICON
G. LucovskyDepartment of Physics, North Carolina State University, Raleigh, NC 27650, U.S.A.
Abstract
The chemical bonding environments of Si and dopant atoms in alloys of a-Si are characterized through a local electronegativity. This parameter is used as a scaling variable for empirical relations based on molecular data : the chemical shifts in the frequencies of Si-H and Si-F local vibrations, and in the binding energies of Si 2p core states.