| Issue |
J. Phys. Colloques
Volume 42, Number C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-695 - C4-698 | |
| DOI | https://doi.org/10.1051/jphyscol:19814154 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-695-C4-698
DOI: 10.1051/jphyscol:19814154
Department of Physics, Nankai University, Tianjin
J. Phys. Colloques 42 (1981) C4-695-C4-698
DOI: 10.1051/jphyscol:19814154
THE ENHANCEMENT OF THE DARK CONDUCTIVITY AND PHOTOCONDUCTIVITY OF GD a-Si INTRODUCING O2, N2
Wen Yuan Xu, Zhong Lin Sun, Zhong Pang Wang and De Lin LeeDepartment of Physics, Nankai University, Tianjin
Abstract
This paper deals with using O2 or N2 gas as doping materials of A-si. A conspicuous enhancement of dark conductivity σd and photoconductivity σph of A-si was found by inducting a suitable amount of O2 or N2 during the process of glow discharge decomposition of silane. The difference of their activation energies of these samples were compared. An infrared spectra analysis and field effect measurements of these A-si films were made and a tentative dicussion given.