| Issue |
J. Phys. Colloques
Volume 42, Number C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-679 - C4-682 | |
| DOI | https://doi.org/10.1051/jphyscol:19814150 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-679-C4-682
DOI: 10.1051/jphyscol:19814150
Division of Applied Sciences, Harvard University, Cambridge, MA 02138, U.S.A.
J. Phys. Colloques 42 (1981) C4-679-C4-682
DOI: 10.1051/jphyscol:19814150
INFERIOR ELECTRONIC PROPERTIES OF RF-SPUTTERED a-Si : H FILMS WITH ONLY THE 2000-cm-1 IR ABSORPTION BAND
S. Oguz, D.K. Paul, J. Blake, R.W. Collins, A. Lachter, B.G. Yacobi and W. PaulDivision of Applied Sciences, Harvard University, Cambridge, MA 02138, U.S.A.
Abstract
The IR vibrational absorption spectra of a-Si : H films show two bands at 2000- and 2100-cm-1, attributed to SiH stretch vibrations. The widespread association of the 2000-cm-1 band with useful photoelectronic properties is tested. It is found that sputtered a-Si : H films deposited close to the target display only the 2000-cm-1 band, but these films also have much deteriorated properties. It is proposed that both results are caused by increased target-particle bombardment at close distances. Regardless of the mechanism involved, these results are presented as definitive evidence against the unique association of the 2000-cm-1 band with useful photoelectronic properties.