Issue
J. Phys. Colloques
Volume 42, Number C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
Page(s) C4-91 - C4-94
DOI https://doi.org/10.1051/jphyscol:1981415
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors

J. Phys. Colloques 42 (1981) C4-91-C4-94

DOI: 10.1051/jphyscol:1981415

THE HALL MOBILITY OF HOPPING CARRIERS

P.N. Butcher and J.A. McInnes

Department of Physics, University of Warwick, Coventry CV4 7AL, England


Abstract
We report numerical calculations of dc Hall mobility for a Holstein 3-site hopping process. In the r-percolation case 7 points are available with αns-1/3 in the range 2 to 6. They are used to study the success of recent analytical treatments. An analytical calculation is made in the low-temperature regime.