| Issue |
J. Phys. Colloques
Volume 42, Number C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|
|---|---|---|
| Page(s) | C4-639 - C4-642 | |
| DOI | https://doi.org/10.1051/jphyscol:19814140 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-639-C4-642
DOI: 10.1051/jphyscol:19814140
1 University of Western Ontario, London, Ontario, Canada
2 The Chinese University of Hong Kong, Shatin, N.T., Hong Kong, China
J. Phys. Colloques 42 (1981) C4-639-C4-642
DOI: 10.1051/jphyscol:19814140
THETA-PINCH PLASMA HYDROGENATION OF EVAPORATED AMORPHOUS SILICON FILMS
P.K. John1, S.K. Wong1, P.K. Gogna1, B.Y. Tong1 and K.P. Chik21 University of Western Ontario, London, Ontario, Canada
2 The Chinese University of Hong Kong, Shatin, N.T., Hong Kong, China
Abstract
Suitably prepared evaporated films are hydrogenated using a theta-pinch plasma source. The evaporated films become highly photoconducting after plasma treatment. The thus produced films do not exhibit the Staebler-Wronski instability and are highly stable against heat and moisture. Hydrogenation by theta-pinch plasma allows quantitative control of the amount and position of the introduced hydrogen. Film properties are more reproducible than those in glow-discharge methods.