| Issue |
J. Phys. Colloques
Volume 42, Number C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-623 - C4-626 | |
| DOI | https://doi.org/10.1051/jphyscol:19814136 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-623-C4-626
DOI: 10.1051/jphyscol:19814136
1 Faculty of Technology, Kanazawa University, Kanazawa 920, Japan
2 Ishikawa Technical College, Tsubata 929-03, Japan
J. Phys. Colloques 42 (1981) C4-623-C4-626
DOI: 10.1051/jphyscol:19814136
PROPERTIES OF PURE SILICON AMORPHOUS FILMS PREPARED BY rf-BIAS SPUTTERING
M. Suzuki1, T. Maekawa1, Y. Kakimoto1 and T. Bandow21 Faculty of Technology, Kanazawa University, Kanazawa 920, Japan
2 Ishikawa Technical College, Tsubata 929-03, Japan
Abstract
Pure a-Si films were prepared by rf-bias sputtering with magnetron target. The substrate was ion-bombarded during deposition by rf-induced bias attempting to remove loosely bound materials from the surface. The electrical and optical properties of sputtered a-Si films were found to be improved by substrate bias without using dangling bond terminators, when sputtering voltage was lower than 1 kV and Ar pressure was higher than ~ 200 mTorr. ESR measurements revealed that the density of defect states was reduced by ion-bombardment during deposition.