| Issue |
J. Phys. Colloques
Volume 42, Number C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-613 - C4-616 | |
| DOI | https://doi.org/10.1051/jphyscol:19814134 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-613-C4-616
DOI: 10.1051/jphyscol:19814134
Electrotechnical Laboratory, Sakura-mura, Ibaraki 305, Japan
J. Phys. Colloques 42 (1981) C4-613-C4-616
DOI: 10.1051/jphyscol:19814134
ISOTHERMAL CAPACITANCE TRANSIENT SPECTROSCOPY : ITS APPLICATION TO THE STUDY OF GAP STATES OF a-Si:H
H. Okushi, Y. Tokumaru, S. Yamasaki, H. Oheda and K. TanakaElectrotechnical Laboratory, Sakura-mura, Ibaraki 305, Japan
Abstract
A basic idea of ICTS (Isothermal Capacitance Transient Spectroscopy) for a system of continuously-distributed gap state and experimental data by the ICTS applied to P-doped a-Si:H Schottky barrier diode are presented. It is shown that the ICTS is a useful tool for the study of gap state of a-Si:H whose material parameters are strongly temperature-dependent.