| Issue |
J. Phys. Colloques
Volume 42, Number C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-579 - C4-582 | |
| DOI | https://doi.org/10.1051/jphyscol:19814126 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-579-C4-582
DOI: 10.1051/jphyscol:19814126
Department of Electrical Engineering and Computer Science and Center for Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, U.S.A.
J. Phys. Colloques 42 (1981) C4-579-C4-582
DOI: 10.1051/jphyscol:19814126
HIGH-SPEED TRANSIENT EFFECTS IN CHALCOGENIDE GLASSES
T. Shiraishi and D. AdlerDepartment of Electrical Engineering and Computer Science and Center for Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, U.S.A.
Abstract
High-speed transient currents are often observed in chalcogenide glasses. We explain these effects by invoking the presence of Valence Alternation Pairs (VAP's). After an electric field is applied across the glass, carriers can tunnel directly from the electrodes onto the appropriately charged defect centers. This leads to the appearance of potential barriers near the contacts, resulting in a rapid decay of the current. Such a mechanism cannot occur in materials without a large concentration of negatively correlated defects.