Issue
J. Phys. Colloques
Volume 42, Number C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
Page(s) C4-27 - C4-31
DOI https://doi.org/10.1051/jphyscol:1981403
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors

J. Phys. Colloques 42 (1981) C4-27-C4-31

DOI: 10.1051/jphyscol:1981403

CONDUCTION NEAR A MOBILITY EDGE

N.F. Mott

Cavendish Laboratory, Cambridge, U. K.


Abstract
The existence or otherwise of a minimum metallic conductivity σmin is examined. It is found that the formulae given previously for this quantity are correct in the limit of high temperatures. At low temperatures, following the considerations of Mott and Stein and Krey, we find that its existence depends on the index s in the behaviour of the localization length 1/α, where α ~ (EC - E)S. If s ≥ 2/3, σmin exists ; if not, a behaves like σmin (E - EC)t where t ≈ 2/3 - s and σmin is the value obtained previously. If s is 0.6, as some calculations suggest, t is 0.067 and a very rapid rise with E is predicted. This is in fair agreement with the observations of Rosenbaum et al3 on Si:P. The situation in two dimensions is reviewed, and some of the results of the scaling theory of Abrahams et al4 in 3d are criticised.