| Issue |
J. Phys. Colloques
Volume 41, Number C8, Août 1980
Fourth International Conference on Liquid and Amorphous Metals
|
|
|---|---|---|
| Page(s) | C8-497 - C8-500 | |
| DOI | https://doi.org/10.1051/jphyscol:19808124 | |
Fourth International Conference on Liquid and Amorphous Metals
J. Phys. Colloques 41 (1980) C8-497-C8-500
DOI: 10.1051/jphyscol:19808124
General Electric Research & Development Center, Schenectady, NY 12301, U.S.A.
J. Phys. Colloques 41 (1980) C8-497-C8-500
DOI: 10.1051/jphyscol:19808124
EFFECT OF REMNANT CRYSTALLINITY ON RESISTIVITY OF AMORPHOUS ALLOYS
A. Mogro-Campero et J.L. WalterGeneral Electric Research & Development Center, Schenectady, NY 12301, U.S.A.
Abstract
It is shown for the Co-B series that changes in the temperature coefficient of resistivity, α, produced by a few percent of crystals within an amorphous matrix, are of the same order as changes of α with composition which have been reported in the literature, and interpreted in terms of physics of the amorphous state. Such low levels of crystalline fraction may escape notice by the standard methods of x-ray analysis or electron microscopy.