| Issue |
J. Phys. Colloques
Volume 41, Number C6, Juillet 1980
THIRD EUROPHYSICS TOPICAL CONFERENCELATTICE DEFECTS IN IONIC CRYSTALS |
|
|---|---|---|
| Page(s) | C6-348 - C6-350 | |
| DOI | https://doi.org/10.1051/jphyscol:1980688 | |
THIRD EUROPHYSICS TOPICAL CONFERENCE
LATTICE DEFECTS IN IONIC CRYSTALS
J. Phys. Colloques 41 (1980) C6-348-C6-350
DOI: 10.1051/jphyscol:1980688
Department of Crystalline Materials Science, Faculty of Engineering, Nagoya University, Nagoya, Japan
LATTICE DEFECTS IN IONIC CRYSTALS
J. Phys. Colloques 41 (1980) C6-348-C6-350
DOI: 10.1051/jphyscol:1980688
Pulse radiolysis of transient defects in KBr at high temperatures
K. Toriumi, R. D. Saxena, K. Soda, K. Tanimura et N. ItohDepartment of Crystalline Materials Science, Faculty of Engineering, Nagoya University, Nagoya, Japan
Abstract
The annealing of the F and V4 centers created by a short electron pulse between 400 K and 700 K has been studied. The annealing of the F centers is found to consist of three stages : two bimolecular decays and a monomolecular decay, which has the longest decay time constant. The temperature dependence of the reaction rate constants and the correlation between the annealing of the F centers and interstitial centers are obtained.