Issue
J. Phys. Colloques
Volume 41, Number C6, Juillet 1980
THIRD EUROPHYSICS TOPICAL CONFERENCE
LATTICE DEFECTS IN IONIC CRYSTALS
Page(s) C6-398 - C6-400
DOI https://doi.org/10.1051/jphyscol:19806101
THIRD EUROPHYSICS TOPICAL CONFERENCE
LATTICE DEFECTS IN IONIC CRYSTALS

J. Phys. Colloques 41 (1980) C6-398-C6-400

DOI: 10.1051/jphyscol:19806101

Current-voltage characteristics of Li-doped MgO oxidized at elevated temperatures

Y. Chen1, J. L. Boldu2 et V. M. Orera3

1  Solid Sate Division, Oak Ridge National Laboratory Oak Ridge, Tennessee 37830, U.S.A.
2  Guest scientist from Instituto de Fisica, UNAM, Mexico, D.F.
3  Guest scientist from University of Zaragoza, Spain


Abstract
The Current density has been measured as a function of the electric field (I vs. E) at 295 K on MgO single crystals containing stable [Li]0 centers (Li+ O- complexes), produced by heat treatment in flowing oxygen. Whereas the treatment temperature has a pronounced influence on the [Li]0 concentration, electrical conductivity and the non-linearity of the I-E curve, thermal aging has considerably less effect.