Issue |
J. Phys. Colloques
Volume 33, Number C2, Avril 1972
2e CONGRÈS EUROPÉEN DE FERROÉLECTRICITÉ
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Page(s) | C2-149 - C2-150 | |
DOI | https://doi.org/10.1051/jphyscol:1972251 |
2e CONGRÈS EUROPÉEN DE FERROÉLECTRICITÉ
J. Phys. Colloques 33 (1972) C2-149-C2-150
DOI: 10.1051/jphyscol:1972251
Thomson-CSF/LCR, 91, Orsay, France
J. Phys. Colloques 33 (1972) C2-149-C2-150
DOI: 10.1051/jphyscol:1972251
HOLOGRAPHIC STORAGE, ELECTRICAL FIXING AND ERASING IN DOPED BaTiO3 CRYSTALSHOLOGRAPHIC STORAGE, ELECTRICAL FIXING AND ERASING IN DOPED BaTiO3 CRYSTALS
F. MICHERON and G. BISMUTHThomson-CSF/LCR, 91, Orsay, France
Abstract
We have demonstrated that holographic storage by optical damage in BaTiO3 crystals is enhanced by doping with Fe3+ and Ni2+, while doping by Nb5+ produces the inverse effect. Stable holograms have been obtained, by applying a pulsed electric field of amplitude slighty smaller than the coercitive field. Erasure is achieved by applying a saturation field.