Issue
J. Phys. Colloques
Volume 33, Number C2, Avril 1972
2e CONGRÈS EUROPÉEN DE FERROÉLECTRICITÉ
Page(s) C2-149 - C2-150
DOI https://doi.org/10.1051/jphyscol:1972251
2e CONGRÈS EUROPÉEN DE FERROÉLECTRICITÉ

J. Phys. Colloques 33 (1972) C2-149-C2-150

DOI: 10.1051/jphyscol:1972251

HOLOGRAPHIC STORAGE, ELECTRICAL FIXING AND ERASING IN DOPED BaTiO3 CRYSTALSHOLOGRAPHIC STORAGE, ELECTRICAL FIXING AND ERASING IN DOPED BaTiO3 CRYSTALS

F. MICHERON and G. BISMUTH

Thomson-CSF/LCR, 91, Orsay, France


Abstract
We have demonstrated that holographic storage by optical damage in BaTiO3 crystals is enhanced by doping with Fe3+ and Ni2+, while doping by Nb5+ produces the inverse effect. Stable holograms have been obtained, by applying a pulsed electric field of amplitude slighty smaller than the coercitive field. Erasure is achieved by applying a saturation field.