| Issue |
J. Phys. Colloques
Volume 42, Number C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-911 - C4-914 | |
| DOI | https://doi.org/10.1051/jphyscol:19814198 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-911-C4-914
DOI: 10.1051/jphyscol:19814198
Department of Physics, Indian Institute of Technology, Delhi, New Delhi 110 016, India
J. Phys. Colloques 42 (1981) C4-911-C4-914
DOI: 10.1051/jphyscol:19814198
PHOTO AND ELECTROCHEMICAL DOPING IN Ge-BASED CHALCOGENIDES
S. Rajagopalan, K. Solomon Harshavardhan, Bhanwar Singh and K.L. ChopraDepartment of Physics, Indian Institute of Technology, Delhi, New Delhi 110 016, India
Abstract
Photo and electrochemical doping of obliquely deposited Ge-chalcogenide films have been studied by AES/XPS techniques. The effect of electrochemical adsorption and photodoping on the optical transmittance is presented. The atomic concentration depth profiles of Ag-sensitized amorphous Ge and Ge0.25Se0.75 films have been established. The chemical state of Ag and the associated chemical changes in the chalcogenide brought about by photo and electrochemical doping processes have been identified. Some details of the built-in columnar structure and stresses in obliquely deposited films have been revealed by the present study.