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GROWTH CONTROL OF Ge_xSi_1-x/Si STRAINED-LAYER SUPERLATTICE BY THE RHEED INTENSITY OSCILLATIONS

T. SAKAMOTO, K. SAKAMOTO, H. OYANAGI, T. YAO, T. ISHIGURO, S . NAGAO, G. HASHIGUCHI, K. KUNIYOSHI and Y. BANDO

J. Phys. Colloques, 48 C5 (1987) C5-333-C5-336

DOI: 10.1051/jphyscol:1987571

T. SAKAMOTO

K. SAKAMOTO

H. OYANAGI

T. YAO

T. ISHIGURO

S . NAGAO

G. HASHIGUCHI

K. KUNIYOSHI

Y. BANDO

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Copyright / Publiée par : EDP Sciences