TRANSIENT REGIMES OF HOT CARRIERS IN p-TYPE SILICON L. Reggiani, J. C. Vaissière, J. P. Nougier et D. GasquetJ. Phys. Colloques, 42 C7 (1981) C7-357-C7-367DOI: https://doi.org/10.1051/jphyscol:1981744
