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Surface-sensitive multiple internal reflection spectroscopy as a tool to study surface mechanisms in CVD: the example of UV photodeposition of silicon dioxide and silicon nitride

C. Licoppe and C. Debauche
Applied Surface Science 63 (1-4) 115 (1993)
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Fast thermal kinetic growth of silicon dioxide films on InP by rapid thermal low-pressure chemical vapour deposition

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Semiconductor Science and Technology 7 (4) 583 (1992)
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Ultraviolet‐induced annealing of hydrogen bonds in silica films deposited at low temperatures

C. Debauche, C. Licoppe, J. Flicstein, O. Dulac and R. A. B. Devine
Applied Physics Letters 61 (3) 306 (1992)
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Characterization of high temperature annealing of InP by scanning photoluminescence and capacitance-voltage measurements of metal/insulator/semiconductor devices

J. Tardy, J.L. Perrossier, F. Krafft, et al.
Materials Science and Engineering: B 9 (1-3) 325 (1991)
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Evidence for a transitory composition pattern in the early stages of the photochemical deposition of silica films on semiconductors

C. Licoppe, C. Meriadec, J. Flicstein, Y. I. Nissim and A. C. Papadopoulo
Applied Physics Letters 59 (1) 43 (1991)
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A combination of rapid thermal processing and photochemical deposition for the growth of SiO2suitable for InP device applications

C. Licoppe, F. Wattine, C. Meriadec, J. Flicstein and Y. I. Nissim
Journal of Applied Physics 68 (11) 5636 (1990)
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Effects of background Fe concentrations in the annealing of ion‐implanted Si into InP substrates for InP metal‐insulator‐semiconductor field‐effect transistor applications

N. Duhamel, P. Krauz and Y. Gao
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