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Surface-sensitive multiple internal reflection spectroscopy as a tool to study surface mechanisms in CVD: the example of UV photodeposition of silicon dioxide and silicon nitride
Ultraviolet‐induced annealing of hydrogen bonds in silica films deposited at low temperatures
C. Debauche, C. Licoppe, J. Flicstein, O. Dulac and R. A. B. Devine Applied Physics Letters 61(3) 306 (1992) https://doi.org/10.1063/1.107920
Characterization of high temperature annealing of InP by scanning photoluminescence and capacitance-voltage measurements of metal/insulator/semiconductor devices
Evidence for a transitory composition pattern in the early stages of the photochemical deposition of silica films on semiconductors
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A combination of rapid thermal processing and photochemical deposition for the growth of SiO2suitable for InP device applications
C. Licoppe, F. Wattine, C. Meriadec, J. Flicstein and Y. I. Nissim Journal of Applied Physics 68(11) 5636 (1990) https://doi.org/10.1063/1.346976
Effects of background Fe concentrations in the annealing of ion‐implanted Si into InP substrates for InP metal‐insulator‐semiconductor field‐effect transistor applications