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Article cité :
K. EBERL , G. KRÖTZ , R. ZACHAI , G. ABSTREITER
J. Phys. Colloques, 48 C5 (1987) C5-329-C5-332
Citations de cet article :
10 articles
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Photoluminescence in short-period Si/Ge strained-layer superlattices
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Phonon frequencies for Si-Ge strained-layer superlattices calculated in a three-dimensional model
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Density of states in short-period Si/Ge superlattices
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Near-band-gap photoluminescence of Si-Ge alloys
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Chemical ordering and boundary structure in strained-layer Si-Ge superlattices
E. Müller, H.-U. Nissen, M. Ospelt and H. von Känel Physical Review Letters 63 (17) 1819 (1989) https://doi.org/10.1103/PhysRevLett.63.1819
Carrier dynamics and recombination mechanisms in staggered-alignment heterostructures
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