ELECTRONIC AND STRUCTURAL PROPERTIES OF GRAIN BOUNDARIES IN Cz-GROWN SILICON BICRYSTALS
J. Phys. Colloques, 43 C1 (1982) C1-89-C1-94
Article cité par
La fonctionnalité Article cité par… liste les citations d'un article. Ces citations proviennent de la base de données des articles de EDP Sciences, ainsi que des bases de données d'autres éditeurs participant au programme CrossRef Cited-by Linking Program. Vous pouvez définir une alerte courriel pour être prévenu de la parution d'un nouvel article citant " cet article (voir sur la page du résumé de l'article le menu à droite).
Article cité :
Citations de cet article :
Experimental test of kinetic theories for heterogeneous freezing in silicon
P. A. Stolk, A. Polman, and W. C. SinkePhysical Review B 47 (1) 5 (1993)
https://doi.org/10.1103/PhysRevB.47.5
Concise Encyclopedia of Semiconducting Materials & Related Technologies
D.G. AstConcise Encyclopedia of Semiconducting Materials & Related Technologies 210 (1992)
https://doi.org/10.1016/B978-0-08-034724-0.50054-8
Ab initio prediction of dopant segregation at elemental semiconductor grain boundaries without coordination defects
T. A. Arias, and J. D. JoannopoulosPhysical Review Letters 69 (23) 3330 (1992)
https://doi.org/10.1103/PhysRevLett.69.3330
Polycrystalline Semiconductors
J. H. WernerSpringer Proceedings in Physics, Polycrystalline Semiconductors 35 345 (1989)
https://doi.org/10.1007/978-3-642-93413-1_47
Noise spectroscopy of silicon grain boundaries
Armin J. Madenach and Jürgen H. WernerPhysical Review B 38 (18) 13150 (1988)
https://doi.org/10.1103/PhysRevB.38.13150
Kinetic many-body model of recrystallization of pure and doped amorphous silicon
Yu. L. KhaitPhysical Review B 33 (4) 2983 (1986)
https://doi.org/10.1103/PhysRevB.33.2983
Asymmetric Melting and Freezing Kinetics in Silicon
Jeff Y. Tsao, Michael J. Aziz, Michael O. Thompson, and Paul S. PeercyPhysical Review Letters 56 (25) 2712 (1986)
https://doi.org/10.1103/PhysRevLett.56.2712
Grain boundaries in semiconductors
C R M GrovenorJournal of Physics C: Solid State Physics 18 (21) 4079 (1985)
https://doi.org/10.1088/0022-3719/18/21/008
Solid-phase crystallization kinetics in doped a-Si chemical-vapor-deposition films
R. Bisaro, J. Magario, and J. F. MorhangePhysical Review B 31 (6) 3568 (1985)
https://doi.org/10.1103/PhysRevB.31.3568
Semiconductor grain-boundary admittance: Theory
G. E. PikePhysical Review B 30 (2) 795 (1984)
https://doi.org/10.1103/PhysRevB.30.795