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Article cité :
F. Komninou , Th. Karakostas , G.L. Bleris , N. A. Economou
J. Phys. Colloques, 43 C1 (1982) C1-9-C1-14
Citations de cet article :
7 articles
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C,H,N and O in Si and Characterization and Simulation of Materials and Processes
C. Molteni, G.P. Francis, M.C. Payne and V. Heine C,H,N and O in Si and Characterization and Simulation of Materials and Processes 121 (1996) https://doi.org/10.1016/B978-0-444-82413-4.50089-5
Electron trapping and impurity segregation without defects:Ab initiostudy of perfectly rebonded grain boundaries
T. A. Arias and J. D. Joannopoulos Physical Review B 49 (7) 4525 (1994) https://doi.org/10.1103/PhysRevB.49.4525
Ab initioprediction of dopant segregation at elemental semiconductor grain boundaries without coordination defects
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A particular case of electronic behaviour of the Sigma =3 grain boundary in p-type Si
D S Kyriakos, A N Anagnostopoulos, Ph Komninou and B Ploss Semiconductor Science and Technology 6 (7) 607 (1991) https://doi.org/10.1088/0268-1242/6/7/007
Grain boundaries in semiconductors
C R M Grovenor Journal of Physics C: Solid State Physics 18 (21) 4079 (1985) https://doi.org/10.1088/0022-3719/18/21/008