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Article cité :
W. den Boer
J. Phys. Colloques, 42 C4 (1981) C4-451-C4-454
Citations de cet article :
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G. Oversluizen, K. J. B. M. Nieuwesteeg and J. Boogaard Applied Physics Letters 59 (3) 312 (1991) https://doi.org/10.1063/1.105581
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G. Oversluizen, R. P. van Kessel, K. J. Nieuwesteeg and J. Boogaard Journal of Applied Physics 69 (5) 3082 (1991) https://doi.org/10.1063/1.348571
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Wang Qimin, Zhu Jiqian, Xie Chenggang, et al. Philosophical Magazine B 61 (3) 437 (1990) https://doi.org/10.1080/13642819008208646
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G. Seynhaeve, R. Barclay, G. Adriaenssens and J. Marshall Physical Review B 39 (14) 10196 (1989) https://doi.org/10.1103/PhysRevB.39.10196
Radiofrequency-plasma-deposited hydrogenated fluorinated silicon-carbon alloy films
Gautam Ganguly, Joydeep Dutta, Swati Ray and A. K. Barua Physical Review B 40 (6) 3830 (1989) https://doi.org/10.1103/PhysRevB.40.3830
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The space-charge-limited-current scaling law in a-SixCy:H
K. Ibrahim and J. I. B. Wilson Philosophical Magazine Letters 59 (3) 155 (1989) https://doi.org/10.1080/09500838908206337
The preexponential factor of the electrical conductivity of undoped amorphous silicon
R Meaudre, P Jensen, M Meaudre and C Godet Journal of Non-Crystalline Solids 114 360 (1989) https://doi.org/10.1016/0022-3093(89)90163-4
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R.R. Troutman and A. Kotwal IEEE Transactions on Electron Devices 36 (12) 2915 (1989) https://doi.org/10.1109/16.40955
The spectroscopy of traps in single crystals, polymers and deposited thin films by space—charge-limited currents
Juliusz Sworakowski and Stanislav Nešp↑rek Vacuum 39 (1) 7 (1989) https://doi.org/10.1016/0042-207X(89)90084-5
Growth and properties of glow-discharge hydrogenated amorphous silicon-carbon alloys from silane-propane mixtures
A. Qayyum, J.I.B. Wilson, K. Ibrahim, S.K. Al-Sabbagh and U. Eicker Thin Solid Films 164 221 (1988) https://doi.org/10.1016/0040-6090(88)90139-3
Metastable effects in the dc conductivity of undoped glow discharge and sputtered hydrogenated amorphous silicon
R. Meaudre, P. Jensen and M. Meaudre Physical Review B 38 (17) 12449 (1988) https://doi.org/10.1103/PhysRevB.38.12449
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G. Micocci, P. Siciliano and A. Tepore Journal of Applied Physics 64 (4) 1885 (1988) https://doi.org/10.1063/1.342473
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J J Schellenberg and K C Kao Journal of Physics D: Applied Physics 21 (12) 1764 (1988) https://doi.org/10.1088/0022-3727/21/12/017
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Hong-Sheng Lin Philosophical Magazine B 55 (1) 101 (1987) https://doi.org/10.1080/13642818708211260
Influence of nitrogen incorporation on the density of gap states in amorphous hydrogenated silicon
M. Meaudre and R. Meaudre Philosophical Magazine B 55 (3) 417 (1987) https://doi.org/10.1080/13642818708208625
Density of states near mid gap in hydrogenated amorphous silicon
E. Yahya and H.R. Shanks Solar Energy Materials 16 (1-3) 189 (1987) https://doi.org/10.1016/0165-1633(87)90018-9
The density of states of sputtered a-Si: H studied by the space-charge-limited current technique The influence of deposition parameters, light and keV-electron irradiation
S. Gangopadhyay, B. Schröder and J. Geiger Philosophical Magazine B 56 (3) 321 (1987) https://doi.org/10.1080/13642818708221320
Experimental determination of the density of gap states in amorphous silicon by Schottky barrier admittance
I. W. Archibald and R. A. Abram Philosophical Magazine B 56 (4) 429 (1987) https://doi.org/10.1080/13642818708221329
Space‐charge‐limited current diode model for amorphous silicon solar cells and their degradation
Larry D. Partain Journal of Applied Physics 61 (12) 5458 (1987) https://doi.org/10.1063/1.338236
The density of states in undoped and doped amorphous hydrogenated silicon
Jan Kočka Journal of Non-Crystalline Solids 90 (1-3) 91 (1987) https://doi.org/10.1016/S0022-3093(87)80389-7
Origin of the non-exponential photocurrent decay in amorphous semiconductors
K. Shimakawa, Y. Yano and Y. Katsuma Philosophical Magazine B 54 (4) 285 (1986) https://doi.org/10.1080/13642818608239029
Determination of density of localized states in amorphous silicon alloys from the low field conductance of thin n-i-n diodes
Michael Shur and Michael Hack Journal of Applied Physics 59 (3) 803 (1986) https://doi.org/10.1063/1.336601
Extended step‐by‐step analysis in space‐charge‐limited current: Application to hydrogenated amorphous silicon
K. Shimakawa and Y. Katsuma Journal of Applied Physics 60 (4) 1417 (1986) https://doi.org/10.1063/1.337319
Density of states and mobility—lifetime product in hydrogenated amorphous silicon, from thermostimulated conductivity and photoconductivity measurements
Meifang Zhu and H. Fritzsche Philosophical Magazine B 53 (1) 41 (1986) https://doi.org/10.1080/13642818608238970
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R.E.I. Schropp, J.W.C. Veltkamp, J. Snijder and J.F. Verwey IEEE Transactions on Electron Devices 32 (9) 1757 (1985) https://doi.org/10.1109/T-ED.1985.22192
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S. Guha and M. Hack Journal of Applied Physics 58 (4) 1683 (1985) https://doi.org/10.1063/1.336063
A comparison of single‐ and double‐carrier injection in amorphous silicon alloys
M. Hack and W. den Boer Journal of Applied Physics 58 (4) 1554 (1985) https://doi.org/10.1063/1.336067
Density of states study of sputtered and evaporated a-Si: H by space-charge-limited current technique
S. Gangopadhyay, S. Iselborn, H. Rübel, B. Schröder and J. Geiger Philosophical Magazine B 51 (3) L33 (1985) https://doi.org/10.1080/13642818508240571
Gap-state distribution in evaporateda-Si without and with posthydrogenation using space-charge-limited-current method
K. P. Chik, C. K. Yu, P. K. Lim, et al. Physical Review B 31 (12) 7827 (1985) https://doi.org/10.1103/PhysRevB.31.7827
Admittance frequency dependence of Schottky barriers formed on dc triode sputtered amorphous silicon: Hydrogen influence on deep gap state characteristics
D. Mencaraglia, A. Amaral and J. P. Kleider Journal of Applied Physics 58 (3) 1292 (1985) https://doi.org/10.1063/1.336097
Anomalous temperature dependence of space-charge-limited currents and photoconductivity in amorphous silicon
Enakshi Bhattacharya and K. L. Narasimhan Philosophical Magazine B 49 (3) 271 (1984) https://doi.org/10.1080/13642817408246513
Flat‐band voltage and surface states in amorphous silicon‐based alloy field‐effect transistors
M. S. Shur, M. Hack and C. Hyun Journal of Applied Physics 56 (2) 382 (1984) https://doi.org/10.1063/1.333976
Studies of the frequency-dependent admittances of Schottky barriers formed on sputtered hydrogenated amorphous silicon
I. G. Gibb and A. R. Long Philosophical Magazine B 49 (6) 565 (1984) https://doi.org/10.1080/13642818408227646
On the analysis of space-charge-limited current—voltage characteristics and the density of states in amorphous silicon
J. W. Orton Philosophical Magazine B 49 (1) L1 (1984) https://doi.org/10.1080/13642818408246492
Residual photocurrent decay in hydrogenated amorphous silicon
K. Shimakawa and Y. Yano Applied Physics Letters 45 (8) 862 (1984) https://doi.org/10.1063/1.95434
Localized density of states in amorphous silicon determined by electrophotography
O. Imagawa, T. Akiyama and K. Shimakawa Applied Physics Letters 45 (4) 438 (1984) https://doi.org/10.1063/1.95250
Origin of the open‐circuit voltage in amorphous silicon Schottky‐barrier solar cells
K. L. Narasimhan and V. Premachandran Journal of Applied Physics 56 (7) 2177 (1984) https://doi.org/10.1063/1.334221
Space-charge-limited conduction for the determination of the midgap density of states in amorphous silicon: Theory and experiment
I. Solomon, R. Benferhat and H. Tran Quoc Physical Review B 30 (6) 3422 (1984) https://doi.org/10.1103/PhysRevB.30.3422
Capacitance temperature analysis of midgap states in hydrogenated amorphous silicon
D. Jousse and S. Deleonibus Journal of Applied Physics 54 (7) 4001 (1983) https://doi.org/10.1063/1.332580
The density of states in amorphous silicon determined by space-charge-limited current measurements
K. D. Mackenzie, P. G. Le Comber and W. E. Spear Philosophical Magazine B 46 (4) 377 (1982) https://doi.org/10.1080/13642818208246448