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Article cité :
L. Schweitzer , M. Grünewald , H. Dersch
J. Phys. Colloques, 42 C4 (1981) C4-827-C4-830
Citations de cet article :
9 articles
Density-of-state distribution and variable-range hopping transport in amorphous silicon prepared by ion bombardment
B. Ruttensperger, G. MÜLler and G. KrÖTz Philosophical Magazine B 68 (2) 203 (1993) https://doi.org/10.1080/01418639308226401
Recombination at correlated dangling bonds and the effects of Fermi level position on steady-state photoconductwiry in amorphous silicon
E. Morgado Philosophical Magazine B 63 (2) 529 (1991) https://doi.org/10.1080/13642819108205957
Defect formation ina-Si:H
K. Winer Physical Review B 41 (17) 12150 (1990) https://doi.org/10.1103/PhysRevB.41.12150
Chemical-equilibrium description of the gap-state distribution ina-Si:H
K. Winer Physical Review Letters 63 (14) 1487 (1989) https://doi.org/10.1103/PhysRevLett.63.1487
Recombination at dangling bonds and band tails: Temperature dependence of photoconductivity in hydrogenated amorphous silicon
F. Vaillant, D. Jousse and J.-C. Bruyere Philosophical Magazine B 57 (5) 649 (1988) https://doi.org/10.1080/13642818808211235
Substitutional doping of amorphous silicon a comparison of different doping mechanisms
G. Müller, H. Mannsperger and S. Kalbitzer Philosophical Magazine B 53 (4) 257 (1986) https://doi.org/10.1080/01418638608244287
The energy of the dangling-bond states in a-Si
P. G. Le Comber and W. E. Spear Philosophical Magazine B 53 (1) L1 (1986) https://doi.org/10.1080/13642818608238960
Transient mobility and lifetime studies in amorphous silicon and their interpretation
W. E. Spear and P. G. Le Comber Philosophical Magazine B 52 (3) 247 (1985) https://doi.org/10.1080/13642818508240598
Majority and minority carrier lifetimes in doped a-Si junctions and the energy of the dangling-bond state
W. E. Spear, H. L. Steemers, P. G. Le Comber and R. A. Gibson Philosophical Magazine B 50 (3) L33 (1984) https://doi.org/10.1080/13642818408238855