Numéro |
J. Phys. Colloques
Volume 51, Numéro C1, Janvier 1990
Proceeding of the International CongressIntergranular and Interphase Boundaries in materials |
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Page(s) | C1-151 - C1-154 | |
DOI | https://doi.org/10.1051/jphyscol:1990122 |
DOI: 10.1051/jphyscol:1990122
GRAIN BOUNDARY DISTRIBUTION IN MATERIALS SUSCEPTIBLE TO ANNEALING TWINNING
V.Yu. GERTSMAN, R.Z. VALIEV, V.N. DANILENKO et O.V. MISHINInstitute of Metals Superplasticity Problems, URSS Academy of Sciences, ul.Khalturina 39, Ufa 450001, U.R.S.S.
Abstract
Grain boundary distributions in various materials with low and medium stalking fault energy subjected to different recrystallization annealings were investigated. It was established that grain boundary spectra in all these materials are similar. The main feature of these spectra is that most of the boundaries are Σ3n boundaries. A model grain boundary spectrum was obtained by computer simulation based on the assumption that Σ3n boundaries formed as a result of multiple twinning played a dominant role in the grain boundary ensemble. The model boundary distribution agrees well with the experimental data. The conclusion is made that in materials susceptible to annealing twinning most (or almost all) of the grain boundaries are Σ3n boundaries and the distribution of these boundaries characterizes some stable state toward which the grain boundary ensemble tends during its evolution.