| Numéro |
J. Phys. Colloques
Volume 49, Numéro C5, Octobre 1988
Interface Science and Engineering '87An International Conference on the Structure and Properties of Internal Interfaces |
|
|---|---|---|
| Page(s) | C5-545 - C5-549 | |
| DOI | https://doi.org/10.1051/jphyscol:1988566 | |
Interface Science and Engineering '87
An International Conference on the Structure and Properties of Internal Interfaces
J. Phys. Colloques 49 (1988) C5-545-C5-549
DOI: 10.1051/jphyscol:1988566
UNIPRESS, High Pressure Research Center, Polish Academy of Sciences, Sokolowska 29, PL-01-142 Warsaw, Poland
An International Conference on the Structure and Properties of Internal Interfaces
J. Phys. Colloques 49 (1988) C5-545-C5-549
DOI: 10.1051/jphyscol:1988566
ON THE EFFECT OF HIGH PRESSURES ON THE MOBILITY OF ATOMS IN GRAIN BOUNDARIES
W. LOJKOWSKIUNIPRESS, High Pressure Research Center, Polish Academy of Sciences, Sokolowska 29, PL-01-142 Warsaw, Poland
Abstract
The results of recent investigations of the effect of high pressures on grain boundary diffusion and grain boundary migration in Aluminium are compared. The activation volume for general grain boundaries migration was found to be less than 0.2 Ω (Ω - atomic volume). On the other hand the activation volume for diffusion along general boundaries and subboundaries is close to 0.8 Ω. A similar value for Ω was obtained for migration of subboundaries. It follows that the formation volume for defects controlling atomic mobility across general boundaries is significantly less than of those controlling diffusion along boundaries and dislocation climb.