| Numéro |
J. Phys. Colloques
Volume 49, Numéro C5, Octobre 1988
Interface Science and Engineering '87An International Conference on the Structure and Properties of Internal Interfaces |
|
|---|---|---|
| Page(s) | C5-165 - C5-169 | |
| DOI | https://doi.org/10.1051/jphyscol:1988514 | |
An International Conference on the Structure and Properties of Internal Interfaces
J. Phys. Colloques 49 (1988) C5-165-C5-169
DOI: 10.1051/jphyscol:1988514
THE STUDY OF LONG RANGE FORCES IN EPITAXY SYSTEMS : THE Ag/Si INTERFACE
J. SHIROKOFF1, K.C. HUI2 et U. ERB11 Queen's University, Department of Metallurgical Engineering, Kingston K7L 3N6, Canada
2 Queen's University, Physics Department, Kingston K7L 3N6, Canada
Abstract
The Ag/SiOx/Si interfacial system is investigated to observe orientation relationships of low energy. For this purpose the orientation distribution of small silver particles on (100) silion substrates was measured after annealing at 700°C. Three orientation relationships resulting in interfaces of low energy were observed, representing cusps in the interfacial energy versus misorientation curve. Two of these preferred orientations are orientations for which close packed and second close packed planes of the silver phase are parallel to the surface, while the third orientation is epitaxial. The epitaxial orientation was found to occur even when an amorphous SiOx interlayer of about 180 Å separated the Ag particles from the Si substrate. The influence of long range ordering effects are discussed.