Numéro
J. Phys. Colloques
Volume 49, Numéro C2, Juin 1988
Optical Bistability - IV
Page(s) C2-405 - C2-408
DOI https://doi.org/10.1051/jphyscol:1988296
Optical Bistability - IV

J. Phys. Colloques 49 (1988) C2-405-C2-408

DOI: 10.1051/jphyscol:1988296

INSTABILITIES IN THE POWER SPECTRUM OF MODE-LOCKED SEMICONDUCTOR LASERS

D. BAUMS1, M. SERÉNYI2, W. ELSÄSSER1 et E.O. GÖBEL1

1  Philipps-Universität, Fachbereich Physik, Renthof 5, D-3550 Marburg, F.R.G.
2  Research Institute for Technical Physics of the Hungarian Academy of Sciences, H-1325 Budapest, Hungary


Abstract
Sideband instabilities in the intensity spectrum of synchronously mode-locked external cavity semiconductor lasers are investigated as a function of the cavity length and frequency detuning. A sideband spectrum with distinct narrow lines is observed in the optical power spectrum for modulation frequencies smaller than the inverse photon round trip time and is attributed to frequency and phase modulation of the modelocked pulse train.