| Numéro |
J. Phys. Colloques
Volume 49, Numéro C2, Juin 1988
Optical Bistability - IV
|
|
|---|---|---|
| Page(s) | C2-131 - C2-134 | |
| DOI | https://doi.org/10.1051/jphyscol:1988230 | |
Optical Bistability - IV
J. Phys. Colloques 49 (1988) C2-131-C2-134
DOI: 10.1051/jphyscol:1988230
1 Tianjin Institute of Science and Engineering, Tianjin, China
2 Takatsuki Research Laboratory, Sumitomo Chemical, Osaka, Japan
3 Institut für Angewandte Physik der Universität Münster, Corrensstr. 2/4, D-4400 Münster, F.R.G.
J. Phys. Colloques 49 (1988) C2-131-C2-134
DOI: 10.1051/jphyscol:1988230
INCREASING ABSORPTION BISTABILITY IN HYBRID SILICON DEVICES AND THE CONTROL OF THE CHARACTERISTICS
H.C. ZHAI1, Y. IYECHIKA2 et D. JÄGER31 Tianjin Institute of Science and Engineering, Tianjin, China
2 Takatsuki Research Laboratory, Sumitomo Chemical, Osaka, Japan
3 Institut für Angewandte Physik der Universität Münster, Corrensstr. 2/4, D-4400 Münster, F.R.G.
Abstract
Increasing absorption bistability is observed in hybrid thermooptical Si devices. The control of the characteristics by the applied voltage and the external resistance are discussed.