| Numéro |
J. Phys. Colloques
Volume 48, Numéro C6, Novembre 1987
34th International Field Emission Symposium / 34ème Symposium International d'Emission de Champ
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| Page(s) | C6-469 - C6-472 | |
| DOI | https://doi.org/10.1051/jphyscol:1987677 | |
J. Phys. Colloques 48 (1987) C6-469-C6-472
DOI: 10.1051/jphyscol:1987677
METAL-SEMICONDUCTOR INTERFACE (Al-Si)
H. Kim1, K. Okuno1 et T. Sakurai21 Department of Electrical Engineering, Nagasaki Institute of Applied Science, Abamachi, Nagasaki, Japan
2 The Institute for Solid State Physics, The University of Tokyo, Minato-ku, Tokyo, Japan
Abstract
The microscopic structure of metal-semiconductore interface and the behavior of Al on a p-Si (110) surface have been investigated using the probe-hole field emission microscope (FEM), the field desorption (FD) and the field emission retarding potential analyser (FPA). The Fowler-Nordheim (FN) plots for the Si tip prepared by electrolytic etching are classified into two groups, the curve and the line. The work function of Si surface by an adsorption of Al decrease with the θ (Al) and the value reaches 3.2 ± 0.2 eV at θ (Al) = 1. A surface resistance of giga ohms which is difficultto remove at usual FD field have been observed for the Si tip having the curved FN plot. This layer can easily be metallized by the interdiffusion of Al at room temperature.