| Numéro |
J. Phys. Colloques
Volume 48, Numéro C6, Novembre 1987
34th International Field Emission Symposium / 34ème Symposium International d'Emission de Champ
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| Page(s) | C6-461 - C6-461 | |
| DOI | https://doi.org/10.1051/jphyscol:1987675 | |
34th International Field Emission Symposium / 34ème Symposium International d'Emission de Champ
J. Phys. Colloques 48 (1987) C6-461-C6-461
DOI: 10.1051/jphyscol:1987675
1 Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, 1000 Berlin 33, F.R.G.
2 National Bureau of Standards, Gaithersburg, MD 20899, U.S.A.
J. Phys. Colloques 48 (1987) C6-461-C6-461
DOI: 10.1051/jphyscol:1987675
FIELD-ION ENERGY SPECTROSCOPY OF GOLD OVERLAYERS ON SILICON
W.A. Schmidt1, A.J. Melmed2, M.F. Lovisa1, M. Naschitzki1 et J.H. Block11 Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, 1000 Berlin 33, F.R.G.
2 National Bureau of Standards, Gaithersburg, MD 20899, U.S.A.
Abstract
By means of field-ion energy spectroscopy unoccupied localized states of the Au/Si(111) contact have been observed. Gold overlayers of 3-5 monolayers and greater were prepared. Under these conditions, an interface of intermixed Si-Au structure was formed. The spectroscopic result in the form of an integral field-ion energy distribution proved the existence of empty electronic states beginning at the Fermi level. A pronounced hump in the distribution was evaluated and resulted in a high density of states at (0.95 ± 0.2)eV above the top of the valence band edge. For methodical reasons the spectroscopy is carried out with p-type Si. Using gold-covered n-type Si, Schottky barrier heights of the Au/n-Si(111) contact can be determined.