| Numéro |
J. Phys. Colloques
Volume 48, Numéro C5, Novembre 1987
3rd International Conference on Modulated Semiconductor Structures
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|---|---|---|
| Page(s) | C5-199 - C5-202 | |
| DOI | https://doi.org/10.1051/jphyscol:1987540 | |
3rd International Conference on Modulated Semiconductor Structures
J. Phys. Colloques 48 (1987) C5-199-C5-202
DOI: 10.1051/jphyscol:1987540
1 Institute of Materials Science, University of Tsukuba, Ibaraki 305, Japan
2 Department of Physics, University of Tokyo, Hongo, Tokyo 113, Japan
3 Seiko-Epson Co. Ltd, 3-3-5 Owa. Suwa, Nagano 392, Japan
J. Phys. Colloques 48 (1987) C5-199-C5-202
DOI: 10.1051/jphyscol:1987540
MONTE CARLO STUDY OF EPITAXIAL OVERLAYER WITH SUBSTANTIAL LATTICE MISMATCH
T. MIYASAKI1, K. AIZAWA1, H. AOKI2, C. ITOH3 et M. OKAZAKI11 Institute of Materials Science, University of Tsukuba, Ibaraki 305, Japan
2 Department of Physics, University of Tokyo, Hongo, Tokyo 113, Japan
3 Seiko-Epson Co. Ltd, 3-3-5 Owa. Suwa, Nagano 392, Japan
Abstract
The atomic configuration of an epitaxial overlayer on a substrate with substantial lattice mismatch is studied by the Monte Carlo method. Covering a wide range of the ratio of intra- and inter-layer interactions, we have clarified a succession of several phases. Circular boundary conditions are also examined to elucidate island/domain structures.