| Numéro |
J. Phys. Colloques
Volume 48, Numéro C5, Novembre 1987
3rd International Conference on Modulated Semiconductor Structures
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|---|---|---|
| Page(s) | C5-13 - C5-19 | |
| DOI | https://doi.org/10.1051/jphyscol:1987502 | |
3rd International Conference on Modulated Semiconductor Structures
J. Phys. Colloques 48 (1987) C5-13-C5-19
DOI: 10.1051/jphyscol:1987502
AT and T Bell Laboratories, Holmdel, NJ 07733, U.S.A.
J. Phys. Colloques 48 (1987) C5-13-C5-19
DOI: 10.1051/jphyscol:1987502
CHEMICAL BEAM EPITAXY OF III-V SEMICONDUCTOR HETEROSTRUCTURES
W.T. TSANGAT and T Bell Laboratories, Holmdel, NJ 07733, U.S.A.
Abstract
Chemical beam epitaxy (CBE) combines many important advantages of molecular beam epitaxy (MBE) and organometallic chemical vapor deposition (OMCVD). This paper briefly reviews some of the recent progress in the prepartion of Ga0.47In0.53As/InP and GaInAsP/InP heterostructures including quantum wells and superlattices, and their device applications.