| Numéro |
J. Phys. Colloques
Volume 47, Numéro C8, Décembre 1986
EXAFS and Near Edge Structure IV
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|---|---|---|
| Page(s) | C8-853 - C8-856 | |
| DOI | https://doi.org/10.1051/jphyscol:19868164 | |
EXAFS and Near Edge Structure IV
J. Phys. Colloques 47 (1986) C8-853-C8-856
DOI: 10.1051/jphyscol:19868164
1 SERC, Daresbury Laboratory, GB-Warrington WA4 4AD, Great-Britain
2 Department of Physics, University of Marburg, D-3550 Marburg, F.R.G.
3 Max-Planck-Institut für Kernphysik, D-6900 Heidelberg, F.R.G.
J. Phys. Colloques 47 (1986) C8-853-C8-856
DOI: 10.1051/jphyscol:19868164
THE LOCAL STRUCTURE OF a-SiOx : H FILMS
G.N. GREAVES1, X.L. JIANG1, R.N. JENKINS1, E. HOLZENKAMPFER2 et S. KALBITZER31 SERC, Daresbury Laboratory, GB-Warrington WA4 4AD, Great-Britain
2 Department of Physics, University of Marburg, D-3550 Marburg, F.R.G.
3 Max-Planck-Institut für Kernphysik, D-6900 Heidelberg, F.R.G.
Abstract
The Si K-edge EXAFS of thin films of amorphous hydrogenated silicon oxide ranging from Si to SiO1.7 have been measured. Analysis of the Si-Si and Si-O pair distribution functions reveals significant bond length changes with oxygen concentration. Films of intermediate composition (e.g. SiO) display considerable disorder in the nearest neighbour Si environment. Both facts give clear evidence for random bonding in these amorphous silicon oxides.