| Numéro |
J. Phys. Colloques
Volume 46, Numéro C10, Décembre 1985
Eighth International Conference on Internal Friction and Ultrasonic Attenuation in Solids
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| Page(s) | C10-63 - C10-66 | |
| DOI | https://doi.org/10.1051/jphyscol:19851014 | |
Eighth International Conference on Internal Friction and Ultrasonic Attenuation in Solids
J. Phys. Colloques 46 (1985) C10-63-C10-66
DOI: 10.1051/jphyscol:19851014
Department of Physics and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, U.S.A
J. Phys. Colloques 46 (1985) C10-63-C10-66
DOI: 10.1051/jphyscol:19851014
ULTRASONIC RELAXATION PEAKS IN ELECTRON IRRADIATED Al-700 ppm Si*
E.C. JOHNSON and A.V. GRANATODepartment of Physics and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, U.S.A
Abstract
Ultrasonic attenuation and velocity measurements were made at 10 and 30 MHz simultaneously, between 1.5 K and 240 K, on a single crystal of Al-700 ppm Si after irradiation below 70 K with 2.5 MeV electrons. Two peaks were detected. At 31 Mhz the peak in the C44 mode is at 112 K, and the second peak is at 22.3 K in the C' mode. Both peaks anneal out near 115 K. What is seen in this system bears a remarkable resemblance to that reported earlier for Al-Ag.