Numéro |
J. Phys. Colloques
Volume 46, Numéro C4, Avril 1985
International Conference on the Structure and Properties of Internal Interfaces
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Page(s) | C4-225 - C4-230 | |
DOI | https://doi.org/10.1051/jphyscol:1985424 |
International Conference on the Structure and Properties of Internal Interfaces
J. Phys. Colloques 46 (1985) C4-225-C4-230
DOI: 10.1051/jphyscol:1985424
Dept. of Metallurgy & Materials Science, The University of Liverpool, P.O. Box 147, Liverpool L69 3BX, U.K.
J. Phys. Colloques 46 (1985) C4-225-C4-230
DOI: 10.1051/jphyscol:1985424
THE THEORY OF CRYSTALLOGRAPHIC DEFECTS IN PERIODIC INTERFACES
R.C. Pond et A. BastaweesyDept. of Metallurgy & Materials Science, The University of Liverpool, P.O. Box 147, Liverpool L69 3BX, U.K.
Abstract
A general theory able to predict the geometrical character of crystallographic defects in periodic interfaces is developed. The theory applies to grain and interphase boundaries, and treats the total symmetry of both the adjacent crystals. An expression is obtained which describes the character of all permissible interfacial line defects. In addition to "dsc" dislocations, it is shown that other types of dislocations can arise, for example when one crystal is nonsymmorphic. Interfacial disclinations, and defects which arise when one crystal is nonholosymmetric are also considered.