| Numéro |
J. Phys. Colloques
Volume 42, Numéro C6, Décembre 1981
International Conference on Phonon Physics
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|
|---|---|---|
| Page(s) | C6-332 - C6-334 | |
| DOI | https://doi.org/10.1051/jphyscol:1981697 | |
International Conference on Phonon Physics
J. Phys. Colloques 42 (1981) C6-332-C6-334
DOI: 10.1051/jphyscol:1981697
The Research Institute for Iron, Steel and Other Metals, Tohoku University, Sendai 980, Japan.
J. Phys. Colloques 42 (1981) C6-332-C6-334
DOI: 10.1051/jphyscol:1981697
TWO-EXCITON PROCESS RESONANT RAMAN SCATTERING IN InSe
N. Kuroda et Y. NishinaThe Research Institute for Iron, Steel and Other Metals, Tohoku University, Sendai 980, Japan.
Abstract
Resonant Raman spectra of nonpolar optical phonons in the layer compound InSe have been measured in the A-exciton region at 1.8 K and 77 K. Out-of-plane phonons exhibit their resonance dispersions typical of the one-exciton process. The in-plane phonon exhibits a dispersion which can be explained exclusively in terms of the two-exciton process where the A- and the C-exciton serve simultaneously as the resonance intermediate states. The results show that the out-of-plane phonons induce only intraband electronic scatterings, whereas in-plane ones do interband scatterings alone.