Numéro
J. Phys. Colloques
Volume 42, Numéro C6, Décembre 1981
International Conference on Phonon Physics
Page(s) C6-271 - C6-273
DOI https://doi.org/10.1051/jphyscol:1981679
International Conference on Phonon Physics

J. Phys. Colloques 42 (1981) C6-271-C6-273

DOI: 10.1051/jphyscol:1981679

THE EFFECT OF DISLOCATIONS ON THERMAL CONDUCTIVITY

R.A. Brown

School of Mathematics and Physics, Macquarie University, North Ryde, N.S.W. 2113, Australia


Abstract
Phonon scattering by the strain fields of deformed crystals is formulated in terms of the third order elastic constants. The thermal restivity due to dislocations is calculated. Theory and experiment are in accord for Cu, Al, Ge and Si but not for LiF.