| Numéro |
J. Phys. Colloques
Volume 42, Numéro C6, Décembre 1981
International Conference on Phonon Physics
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|---|---|---|
| Page(s) | C6-667 - C6-669 | |
| DOI | https://doi.org/10.1051/jphyscol:19816195 | |
International Conference on Phonon Physics
J. Phys. Colloques 42 (1981) C6-667-C6-669
DOI: 10.1051/jphyscol:19816195
Department of Physics, Purdue University, West Lafayette, Indiana 47907, U.S.A.
J. Phys. Colloques 42 (1981) C6-667-C6-669
DOI: 10.1051/jphyscol:19816195
ULTRASONIC PHONONS IN Hg0.8Mn0.2Te : DEPENDENCES OF ELASTIC MODULI ON PRESSURE AND TEMPERATURE
M.H. Chao et R.J. SladekDepartment of Physics, Purdue University, West Lafayette, Indiana 47907, U.S.A.
Abstract
Ultrasonic transit times have been measured for Hg0.8Mn0.2Te, a semimagnetic semiconductor, as a function of pressure up to 4 kbar at 296 K and of temperature from 1.5 to 296 K. They are used to deduce the second order elastic stiffness constants SOEC and also force constants and third order elastic constants at 296 K. The shear modulus Cs = (C11 - C12)/2 is decreased by pressure implying a structural transformation at 10 kbar. No elastic effects attributable to the magnetic moments of the Mn ions are observed even at low temperatures.