| Numéro |
J. Phys. Colloques
Volume 42, Numéro C6, Décembre 1981
International Conference on Phonon Physics
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|
|---|---|---|
| Page(s) | C6-54 - C6-56 | |
| DOI | https://doi.org/10.1051/jphyscol:1981616 | |
International Conference on Phonon Physics
J. Phys. Colloques 42 (1981) C6-54-C6-56
DOI: 10.1051/jphyscol:1981616
1 National Chemical Laboratory, Poona, 411008, India
2 Department of Physics, Pennsylvania State University, University Park, Pennsylvania 16802, U.S.A.
3 Supported in part by NSP Grant DMR7908390 and by SERI Contract XS-ø-9010-5.
J. Phys. Colloques 42 (1981) C6-54-C6-56
DOI: 10.1051/jphyscol:1981616
RAMAN SCATTERING IN ANNEAL STABLE AMORPHOUS SILICON
S.T. Kshirsagar1, 2 et J.S. Lannin2, 31 National Chemical Laboratory, Poona, 411008, India
2 Department of Physics, Pennsylvania State University, University Park, Pennsylvania 16802, U.S.A.
3 Supported in part by NSP Grant DMR7908390 and by SERI Contract XS-ø-9010-5.
Abstract
First order Raman scattering measurements are reported on anneal stable amorphous Si prepared by chemical vapor deposition. The results in dicate substantial modifications of the Raman spectra relative to a-Si prepared by other methods. The results indicate improved short range order in CVD a-Si resulting from a narrowing of the bond angle distribution. Similarties t o a-Si1-xHx spectra suggest improved short order in the hydrogen alloys.