Numéro
J. Phys. Colloques
Volume 42, Numéro C5, Octobre 1981
ICIFUAS-7
Seventh International Conference on Internal Friction and Ultrasonic Attenuation in Solids
Page(s) C5-689 - C5-693
DOI https://doi.org/10.1051/jphyscol:19815106
ICIFUAS-7
Seventh International Conference on Internal Friction and Ultrasonic Attenuation in Solids

J. Phys. Colloques 42 (1981) C5-689-C5-693

DOI: 10.1051/jphyscol:19815106

MAGNETIC FIELD DEPENDENT RELAXATION TIME IN p-InSb AT LOW TEMPERATURES

J.D.N. Cheeke1, G. Madore1 et A. Hikata2

1  Département de Physique, Université de Sherbrooke, Sherbrooke J1K 2R1, Québec, Canada
2  Metals Research Laboratory, Brown University, Providence RI, U.S.A.


Abstract
We have observed a magnetic field dependent relaxation time in p-InSb at low temperatures (~lOK) where the electrical conduction is by free holes in the valence band. The relaxation peak is only observed in nondegenerate specimens for those acoustic modes which are piezoelectrically active. The results are compared with the acousto-electric theory of Hutson and White and found to be in substantial agreement.